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| (R) STPS1L60 POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF(max) FEATURES AND BENEFITS 1A 60 V 150C 0.56 V SMA (JEDEC DO-214AC) STPS1L60A DO-41 STPS1L60 Negligible switching losses Low forward voltage drop Surface mount miniature package Avalanche capability specified DESCRIPTION Axial and Surface Mount Power Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and DO-41, this device is especially intended for use in low voltage, high frequency inverters and small battery chargers. Table 2: Order Codes Part Number STPS1L60A STPS1L60 STPS1L60RL Marking GB6 STPS1L60 STPS1L60 Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) IFSM PARM Tstg Tj dV/dt Average forward current SMA DO-41 TL = 130C = 0.5 TL = 120C = 0.5 tp = 10ms sinusoidal tp = 1s Tj = 25C Value 60 10 1 40 1200 -65 to + 150 150 10000 Unit V A A A W C C V/s Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage dPt ot 1 * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j - a ) August 2004 REV. 6 1/6 STPS1L60 Table 4: Thermal Resistance Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to lead Parameter Lead length = 10 mm Lead length = 10 mm SMA DO-41 SMA DO-41 Value 120 100 30 45 Unit C/W C/W Table 5: Static Electrical Characteristics Symbol IR * Tests conditions Tj = 25C VR = VRRM Reverse leakage current Tj = 100C Tj = 25C Tj = 100C VF ** Forward voltage drop Tj = 125C Tj = 25C Tj = 100C Tj = 125C Pulse test: * tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.12 IF (RMS) Parameter Min. Typ 1.5 Max. 50 5 0.57 0.56 Unit A mA IF = 1A 0.5 IF = 2A 0.6 2 0.54 0.75 0.68 0.66 V Figure 1: Average forward power dissipation versus average forward current PF(AV)(W) 0.8 Figure 2: Average forward current versus ambient temperature ( = 0.5) IF(AV)(A) 1.2 = 0.1 = 0.05 0.6 = 0.2 = 0.5 Rth(j-a)=Rth(j-I) 1.0 SMA 0.8 Rth(j-a)=120C/W DO-41 =1 0.4 0.6 Rth(j-a)=100C/W 0.2 T 0.4 T 0.2 IF(AV)(A) 0.0 0.0 0.2 0.4 0.6 0.8 =tp/T 1.0 tp 1.2 =tp/T 0.0 0 25 tp 50 Tamb(C) 75 100 125 150 2/6 STPS1L60 Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 1.2 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) power 0.1 0.8 0.6 0.4 0.2 0.01 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) IM(A) 8 7 6 5 Ta=25C Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-41) IM(A) 8 7 6 5 4 Ta=25C 4 3 2 IM Ta=50C Ta=50C 3 2 IM Ta=100C Ta=100C 1 0 1.E-03 t 1 t =0.5 t(s) 0 1.E-02 1.E-01 1.E+00 1.E-03 =0.5 t(s) 1.E-02 1.E-01 1.E+00 Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout) (SMA) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 = 0.2 = 0.1 Single pulse = 0.5 Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 = 0.2 = 0.5 T 0.2 = 0.1 T 0.1 tp(s) =tp/T 1.E+01 tp 0.0 1.E+02 1.E-01 Single pulse tp(s) 1.E+01 =tp/T 1.E+02 tp 1.E+03 1.E+00 3/6 STPS1L60 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) IR(mA) 1E+1 Tj=125C Figure 10: Junction capacitance versus reverse voltage applied (typical values) C(pF) 200 F=1MHz Tj=25C 1E+0 Tj=100C 100 1E-1 50 1E-2 Tj=25C 1E-3 20 VR(V) 1E-4 0 5 10 15 20 25 30 35 40 45 50 55 60 VR(V) 10 1 10 100 Figure 11: Forward voltage drop versus forward current (maximum values, high level) (SMA) IFM(A) 10 Tj=100C Figure 12: Forward voltage drop versus forward current (maximum values, low level) (DO-41) IFM(A) 2.0 1.8 1.6 Tj=100C Tj=25C 5 Tj=25C 1.4 1.2 1.0 0.8 2 0.6 0.4 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.2 0.0 0.0 0.1 0.2 0.3 0.4 VFM(V) 0.5 0.6 0.7 0.8 0.9 1.0 Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m) (SMA) Rth(j-)(C/W) 140 120 100 80 Figure 14: Thermal resistance versus lead length (DO-41) Rth(C/W) 120 Rth(j-a) 100 80 60 Rth(j-I) 60 40 20 0 0 1 40 20 S(Cu)(cm) 2 3 4 5 0 5 10 Lleads(mm) 15 20 25 4/6 STPS1L60 Figure 15: SMA Package Mechanical Data DIMENSIONS E1 REF. Millimeters Min. Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L Figure 16: SMA Foot Print Dimensions (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPS1L60 Figure 17: DO-41 Package Mechanical Data C A C / OB OD / OD / REF. A B C D Table 6: Ordering Information Ordering type STPS1L60A STPS1L60 STPS1L60RL DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.07 5.20 0.160 0.205 2.04 2.71 0.080 0.107 28 1.102 0.712 0.863 0.028 0.034 Marking GB6 STPS1L60 STPS1L60 Package SMA DO-41 DO-41 Weight 0.068 g 0.34 g 0.34 g Base qty 5000 2000 5000 Delivery mode Tape & reel Ammopack Tape & reel Band indicates cathode Epoxy meets UL94, V0 Table 7: Revision History Date Jul-2003 Aug-2004 Revision 5A 6 Description of Changes Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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